Comparative Studies of Electrical Properties of MFS and MIS Capacitors for Non-Volatile Memory Applications

In this article, a comparative study of Metal-Insulator-Semiconductor and Metal-Ferroelectric-Semiconductor capacitor with ferroelectric material Bismuth ferrite has been done by forward and reverse sweep of current-voltage and capacitance–voltage characteristics for leakage current and memory window behaviour respectively. There is no retention time in Metal-Insulator-Semiconductor capacitor, whereas in Metal-Ferroelectric-Semiconductor retention time is long. The spontaneous polarization, remnant polarization and coercive field of ferroelectric Bismuth ferrite thin film are obtained from polarization-voltage characteristics.