A GOA Circuit Composed of a-IGZO TFT with Q-point Precharge Function

During the operation of GOA (gate on array) circuit, the Q node is pulled down by a pull-down maintenance unit. However, due to the signal delay of the circuit, the pull-down maintenance of the Q node can not be closed in time, which will cause the leakage of the Q node. In order to improve the leakage of Q node, we add the pre pull-down unit of Q node (the reverse signal of Q node) in the GOA circuit, so that the leakage of Q node is significantly reduced. The precharge potential of Q node is increased from 15.64v to 17.58v.