A High-Voltage Dynamic Level Shifter with Current Mirror and Augmented Cross-Coupling Structure for High-Side NMOS Gate Driver

A high-voltage dynamic level shifter with current mirror and augmented cross-coupling structure for high-side NMOS power switch is presented. The proposed circuit includes isolated low voltage transistors, medium voltage transistors and high voltage transistors to shift the low voltage control signal from low voltage domain (VDD～4V) to high voltage power domain (VIN ～ 80V). The circuit has characteristics of low power, high speed and reliability enhanced by adopting current mirror and augmented cross-coupling structure. The circuit is designed and simulated with 0.35µm high voltage BCD process. Simulation results demonstrate that the rising and falling delay time of proposed level shifter are 4.5ns and 5.5ns respectively, and the turn on and turn off propagation delay time of a high voltage NMOS gate driver with the proposed level shifter are 25ns and 30ns respectively. the circuit can be used to drive high-side NMOS power switch with maximum voltage reaching 80V.