A 40nm CMOS Ultra-Wideband Active Power Divider/Combiner Design

An ultra-wideband active power divider/combiner based on cascode bidirectional amplifier (BDA) is presented in this paper. The lumped inductors and the parasitic capacitances in the transistors constitute the artificial transmission lines. The proposed circuit utilizes a three-stage bidirectional amplifier topology to achieve broadband operation. In this paper, the SMIC 40nm CMOS process is used. The simulation results of the two-way power divider/combiner circuit show that the return loss S11, S22 and S33 are lower than -10dB, and the gain S21 is around 1.3-7.2 dB, and the maximum isolation S23 is about -60dB in the 50.470.4GHz frequency range. By cascading two-way power dividers/combiners, the eight-way power divider/combiner can be formed. According to the simulation results, the cascaded circuit also has good gain and isolation in the 50.4-70.4 GHz frequency range, and the maximum gain can reach 21dB.