Electroluminescence of Si Based MOS Device with Ternary Rare Earth Doped Oxide

Electroluminescence (EL) of MOS devices with rare-earth related oxide layer, which were fabricated with the mixtures of organic liquid sources of (Ce + Pr) and Gd spin-coated on the Si substrate and annealed, are reported. UV and visible white EL were observed. The spectral peaks of the EL correspond to radiative transitions of Pr
³⁺
, Ce
³⁺
, and Gd
³⁺
ions. Effects of compounding ratios of (Ce + Pr) and Gd devices on EL characteristics are analyzed.