3-Dimensional 4H-SiC MOSFETs for Harsh Environment Electronics

An increased in drain current and improved of subthreshold slope have been demonstrated in enhancement mode 4H-SiC FinFET using Al
2
O
3
dielectric. The fabricated devices utilised top and sidewall surface of the 3-Dimensional structure formed by RIE. The electrical characteristics of planar MOSFET using an identical dielectric process were compared. The correlation between Fin width (2, 5, 10 and 50 um) and drain current for single Fin and multi-Fin was also studied. Furthermore, the effect of different crystal orientation on the sidewall with from (
$1\bar{1}00$
) to (
$11\bar{2}0$
) were investigated. 3-Dimensional MOSFET with (
$11\bar{2}0$
) sidewall plane shows the highest mobility of 140 with S of 120 mV/dec.