Extraction of Mobility in 3-D NAND Flash Memory with Poly-Si Based Macaroni Structure

In this paper, mobility model for poly-Si based macaroni structure in 3-D NAND Flash memory is presented. String current was calibrated with technology computer-aided design (TCAD) simulation at room temperature (25°C) with U-shaped trap distribution. Then, unit word line (WL) I-V curve was extracted, and effective mobility was extracted from these data using analytical equation. Mobility model is based on Meyer-Neldel Rule (MNR). We extracted grain boundary barrier height
$(\varphi_{\mathrm{b}})$
and fitted with our model. Finally, we fitted effective mobility
$(\mu_{\mathrm{eff}})$
with our model and fitted string current with SPICE simulation.