Non-Quasi-Static Effect on Ge-Body pTFET for Different Source Materials

This paper presents the results of a systematic investigation on the radio-frequency (RF) and Non-Quasi-static performance figure-of-merits (FOMs) of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Germanium (Ge) channel and GaAsP, SiGe, and InAIAs as source materials. Recently, Ge-pTFETs have drawn a lot of attention due to their higher band-to-band tunneling rate than the silicon pTFETs. The Ge-body staggered heterostructures further reduce the tunneling barrier and boost the drive current significantly. For the first time, this paper presents the results of a detailed study of the impact of compound semiconductor as source materials on the RF performances of Ge-pTFETs including non-quasi-static (NQS) effect. The RF FOMs of the devices are evaluated from the simulation data on intrinsic gate-to-source
$(\mathbf{C}_{gs})$
and gate-to-drain
$(\mathbf{C}_{gd})$
capacitances, gate to drain intrinsic resistance
$(\pmb{R}_{gd})$
, transport delay
$(\tau_{m})$
, maximum frequency of oscillation
$(\pmb{f}_{\pmb{MAX}})$
, and cutoff frequency
$(f_{T})$
.