Extensive Study on Effect of Pinhole Induced Electric Field in Si CS-TOPCon Solar Cell

Si solar cell based on carrier selective contact and tunnel oxide passivated contact (TOPCon) show great promise toward reaching the Shockly-Quiesser (SQ) limit. The carrier selective transport provides lower recombination and hence increases the external Voc. In this work a thin oxide layer is introduced which will act as a carrier selective layer and carriers will tunnel through it. The tunnel oxide provides tunneling and transport through the pinholes. The electric field effect in the oxide due to pinholes increases the carrier transport. The passivation reduces the recombination at the contact which results in the reduced resistivity. The optimized design of CS-TOPCon solar cell results in achieving up to 29.03% due to high electric field.