Beta-Ga2O3 MOSFET Device Optimization via TCAD

MOSFET power device with beta-Ga
2
O
3
substrate are simulated via TCAD and discussed in this paper. Material models are established and calibrated based on the existing experimental results. Device design specifications like channel doping profile, gate-source distance, selective doping, field plate enhancement, and ion-implantation profile are evaluated and discussed. The results serve as a guide and reference for the beta-Ga
2
O
3
, MOSFET device design.