Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

The electromagnetic wave of 1.0 terahertz (THz) was detected using a square law detector made of InAs quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on quartz. The voltage responsivity of 1.7 kV/W was achieved at room temperature. The noise equivalent power (NEP) was evaluated to be below
$\mathbf{2\ pW}/\mathbf{Hz}^{\mathbf{0.5}}$
. A new circuit model which well explains the detection characteristic and dependence of the sensitivity on physical parameters of MOSFETs is proposed. These results prove the high potential of InAs QW MOSFETs on quartz for implementation of THz imaging.