Process-induced $V_{t}$ variability in nanoscale FinFETs: Does $V_{t}$ extraction methods have any impact?

In this work, we have studied the effect of threshold voltage
$(\mathbf{V}_{t})$
extraction methods on in-wafer variability of sub-10nm fin-width FinFETs. Using six different
$\mathbf{V}_{t}$
extraction techniques, it is experimentally demonstrated that the
$\mathbf{V}_{t}$
variability is independent of the extraction technique. The significant variation in work-function and oxide-charges compared to mobility and series-resistance is shown to be the reason behind these observations. It is also shown that the inferences drawn from this work will hold true even for future CMOS nodes.