Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash

High-k dielectrics are implemented in a split-gate type charge-trapping nonvolatile memory (SG-CTNVM) for the first time. Owing to the split-gate structure and optimized trapping properties of HfSiO film, a memory window of 3.0 V was realized under very low ±6 V and fast 1 μs program/ 100 μs erase condition. Retention property was significantly improved by insertion of SiON film in the middle of blocking Al
2
O
3
layer. The blocking SiON layer was formed by deposition technique only, without thermal oxidation which was found to bring P/E cycling degradation.