Sub-µm a-IGZO, Fully integrated, Process improved, Vertical diode for Crosspoint arrays

For the first time at our knowledge, we demonstrate a sub-µm indium-gallium-zinc oxide (a-IGZO) (vertical) Schottky diodes on a 300mm platform. We demonstrate that the choice of a suitable Al2O3-based encapsulation layer is critical in order to achieve near-ideal diode parameters (n, φSBH) and uniform wafer-level behavior. We show, for the smallest devices of 0.5µm x 0.5µm, an ideality factor n of 1.5 and Schottky barrier height (φSBH) of 0.7 eV while simultaneously achieving a peak current density of 0.1 MA/cm
²
.