A Study of BEOL Processed Hf0.5Zr0.5O2-based Ferroelectric Capacitors and Their Potential for Automotive Applications

This work presents the results of our study of Back-End-of-Line (BEOL)-processed Hf
0.5
Zr
0.5
O
2
(HZO)-based Metal-Ferroelectric-Metal (MFM) capacitors fabricated at temperatures never exceeding 400
⁰
C, and over a wide range of areas (10
^˗2
to 10
³
µm
²
). These devices exhibit very tight distributions throughout the 12-in wafers that we measured, as well as neglectable size dependence. This work also presents our current understanding of the wake-up issue, and suggestion for possible ways of device engineering. In addition, the potential for automotive applications is demonstrated based on the results of a set of MFM devices systematically measured and analyzed at elevated temperatures (150-427
⁰
C).