Area-Efficient and Bias-Flexible Inline Monitoring Structure for Fast Characterization of RTN and Transistor Local Mismatch in Advanced Technologies

An improved set of Scribe Line Monitors (SLMs) with high device densities have been designed for inline monitoring of Random Telegraph Noise (RTN) and transistor local mismatch. This infrastructure offers increased statistics from measurement on a single wafer with parallel Device Under Test (DUT) testing capability thereby having an efficient testing time. The characterization results from engineering silicon are presented in this paper.