Influence of GaN layer to AlGaN layer width Ratio on Analog Performance of an Underlapped DG AlGaN/GaN based MOS-HEMT

This paper aims at exploring the changes in analog performance of a symmetric Underlapped Double-Gate hetero- junction based AlGaN/GaN MOS-HEMT device, with Hafnium oxide as the high-k dielectric Gate material, on varying the GaN layer to AlGaN layer width ratio. The variations have been studied for different ratios, where the ratios have been varied by individually varying one of the GaN and AlGaN layer widths at a time, while keeping the other constant. The analog performance variations have been studied on Drain current (I
d
), Transconductance (g
m
), and Transconductance Generation Factor (g
m
/ I
d
). Studies show that the GaN layer to AlGaN layer width ratio greatly determines the performance of a given device, manifested in significant variations in threshold voltage of device, on-state currents and efficient methods of performance enhancement.