Effect of Parasitic Inductance Mismatch on Short-Circuit Characterization of Paralleled SiC MOSFETs

In order to clarify the effect mechanism of circuit parameters on short-circuit (SC) characterization of paralleled Silicon Carbide (SiC) MOSFETs, this paper analyzes the influence of multiple parasitic inductance mismatches in detail. Both simulation and experimental results show that the influence of parasitic inductance mismatch on the SC performance of paralleled SiC MOSFETs and validate the circuit analysis. Finally, several suggestions are given for the internal layout of the multichip power module.