A Novel Short-Circuit Protect Method for SiC MOSFET Module Based on Simplified Rogowski Coil Current Sensor

SiC MOSFET devices have better performance compared to conventional Si devices. But due to the difference of short-circuit characteristics, it is necessary to use special short-circuit protection method for SiC MOSFET. A novel short-circuit protection method is proposed based on the simplified Rogowski Coil current sensor in this paper. Compared with other short-circuit protection method, it has lower circuit complexity, less sensitivity to temperature, insulating with the power stage, without introducing parasitic parameters, and faster dynamic response and It also can be used as overload protection. Firstly, the operating principle of the proposed protection method is introduced. Secondly, the structure of the PCB Rogowski Coil and its signal processing circuit are analyzed. Finally, simulation and experiment for the designed PCB Rogowski Coil are verified, and the short-circuit protection function for SiC MOSFET is carried out under different short-circuit conditions.