Performance Analysis of TMG FinFETs for Low Power Application with Improved Analog/RF Characteristics

In this manuscript, a 3D simulation model of FinFET is proposed. The device is designed in such a manner that the gate is made with three metals of different work functions, so it’s named as Tri-Metal Gate (TMG) FinFET. The work function at source/channel junction is kept high in comparison to the drain/channel junction to reduce DIBL and improve transconductance. This structure improves ONstate current, with suppressed OFF-state current. Further DC and analog/RF characteristics such as transfer characteristics, parasitic capacitance (C
gd
, C
gs
), transconductance (g
m
), cut off frequency (f
T
), output transconductance (g
ds
), transconductance generation factor(TGF) are investigated. A comparative analysis of the proposed device with an existing device is also performed and results are studies. Above parameters support its utility at ultra-low power VLSI. The device has been simulated using TCAD simulator.