Drift diffusion modelling of three branch junction (TBR) based nano-rectifier

This paper proposes the non-linear electrical behaviors of three branch junction (TBR) based nano-rectifier. The monolayer graphene is deposited on highly p-doped silicon wafer. The input voltage of ±100 mV is applied in the both push-pull and push-fix configurations to get the rectified output. The drift diffusion model of Silvaco TCAD is used for DC and AC analysis. The voltage rectification is observed at room temperature as well as cryogenic temperatures. The polarity of the output can be altered either by tuning the back gate voltage or by changing the type of charge carriers. Based on its electrical properties, a number of operations such as frequency multiplier, adders, and latches with high speed upto THz can be performed.