Ohmic Contact Characteristic of Ti/Al/Ni/Au on AlGaN

The ohmic contact formed by the Ti/Al/Ni/Au metal system on the n-AlGaN material was studied by using the dot-point transmission line model (CTLM) to optimize the thickness of the Ti metal layer and the annealing conditions. The results show that the thickness of Ti/AI/Ni/Au gold is 40, 150, 40 and 50 nm, respectively, and the annealing condition is high purity N2 atmosphere at 850°C and 30s to obtain good ohmic contact on AlGaN material, and its specific contact resistivity is 2.04×10
^-4
Ω·cm
²
.