Simulation Study on Temperature Characteristics of IGBT Switching with Polysilicon Distributed Gate Resistance Effect

In this paper, based on the current crowding effect appearing in the IGBT switching process, the structural model of a high-voltage 4-cell IGBT established. The gate resistance and distributed gate resistance are used to simulate the distribution of three types of gate-bus bars. The temperature distribution of IGBT cells during switching are simulated by Sentaurus TCAD software. The influence of current crowding and the gate resistance on the temperature distribution of IGBT is analyzed. The results show that the reasonable distributed gate resistance has obvious improvement on the uneven temperature distribution caused by current crowding.