Spin-dependent Transport of DMS on the Base Silicon Whiskers: Impedance, Structure and Properties

An influence of a magnetic impurity distribution on the AC transport of charge carriers in silicon whiskers doped with boron and nickel at low temperatures was investigated. The concentration of Ni impurities obtained from impedance and magnetization data was shown to coincide and equal to 3×10
¹⁷
cm
^-3
. The obtained hysteresis of the whisker magnetization was used to design multifunctional sensor as well as storage device.