Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications

The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.