Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications

Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated. Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The investigation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). Various physical models such as mobility, polarization and recombination models are used to tune the simulation. It is observed that breakdown voltage enhances source field plate length. It is also observed that VBR shows less dependency for LFP > 4μm.