Pyrolyzed Polyacrylonitrile Based Composite with Amorphizing Silicon Additives

The paper presents a study of the possibilities to obtain pyrolized polyacrylonitrile based composite with amorphizing silicon additives. Geometrical and electronic-energy characteristics of the composite under study are described. Theoretical calculations were performed using the molecular cluster model and the quantum chemical method MNDO. This material can form the basis for the production of amorphous metal composites, which in microelectronics can be used to create diffusion barriers at the metal-semiconductor boundary. Silicon-modified PPAN can act as a substrate for printing electronic chips, which will significantly reduce the cost and speed up the process of their creation.