Fabrication and Characterization of CdZnTeSe Nuclear Detectors

Cadmium zinc telluride selenide (CdZnTeSe) is emerging as a promising semiconductor material for low-cost production of nuclear and radiological detection systems capable of operating at room temperature. This paper presents studies of the fabrication process and detector response for gamma-ray detectors produced from high-quality CdZnTeSe crystals grown by the traveler heater method (THM). The resistivity of the CdZnTeSe is on the order of 10
¹⁰
Ω-cm. The electron mobilitylifetime (μτ) product characterizing the charge-transport properties is on the order of 10
^-3
cm
²
/V. Energy resolutions as good as 6.5% FWHM for the 59.5-keV gamma-peak of
²⁴¹
Am were recorded for planar detectors with gold contacts.