Existence and Static Stability of a Capillary Free Surface Appearing in a Dewetted Bridgman Process II

In this paper six theoretical results, concerning the static stability and existence of a capillary free surface in a dewetted Bridgman crystal growth process, are presented. The results are obtained in an axis symmetric 2D model for semiconductors for which θ
_c
+ α
_e
> π (where: θ - wetting angle and α - growth angle). c e Numerical illustration is given in case of GaSb semiconductor when O
₂
is introduced in the ampule for increase the apparent wetting angle. The reported results can help, the practical crystal growers, in better understanding the dependence of the free surface shape and size on the pressure difference across the free surface and prepare the appropriate seed size, and thermal conditions before seeding the growth process.