Reduced oxygen partial pressure SiGe condensation for the fabrication of compressively strained SGOI substrates

We report the use of a low oxygen partial pressure dry furnace oxidation process for the fabrication of ultra-thin compressively strained SGOI layers. The effect of a reduced oxygen partial pressure on oxidation kinetics and Ge depth profile evolution is shown. Resulting strain, SiGe surface and roughness evaluation are carried out to compare the residual strain values and the crystal defects generation to results obtained with a conventional pure oxygen process.