Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs

In this work, it is shown that the noise spectra of the investigated Si/SiGe superlattice I/O n-channel FinFETs contain flicker and generation-recombination (GR) noise components. The 1/f noise contributions originate from the number fluctuation mechanism. A correlation between the low field mobility and the magnitude of the 1/f noise levels is observed and explained by considering remote Coulomb scattering. The study of GR noise suggests the existence of traps located in the depleted fins. First low frequency noise spectroscopy analysis suggests the presence of traps related to divacancies and hydrogen.