New Methodology for Series-Resistance-Immune MOSFET Parameter Extraction from Linear to Saturation Region

A new methodology for MOSFET characterization and parameter extraction making use of the on-resistance characteristics R
_on
(V
_g
, V
_d
)=V
_d
/I
_d
(V
_g
, V
_d
) and associated derivatives dR
_on
/dV
_g
and dR
_on
/d
_Vd
is proposed. This approach enables to eliminate the influence of source-drain series resistance R
_sd
not only in linear region but also in non-linear region of MOSFET operation.