A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

This paper presents a low-power wideband push-push voltage controlled oscillator (VCO), achieving a frequency tuning-range (FTR) of 19 GHz (14%) at a center frequency of 136 GHz. The VCO yields a minimum phase noise of -86.5 dBc/Hz at 1 MHz offset at a power consumption of around 27 mW from a 1.8 V supply, which yields a FOMT of -178 dBc/Hz. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ft/fmax of 250 GHz/370 GHz, respectively, and is integrated with a by-32 divider chain attached to the fundamental output of the VCO, offering a 2.1 GHz output for an external phase-locked loop (PLL).