A X-band 20W Power Amplifier MMIC with 50% Bandwidth Using 6-inch GaN Technology

A 20 W GaN monolithic microwave integrated circuit (MMIC) high power amplifier in X-band is presented in this work. The design is based on the 6-inch GaN process with 0.25 micron gate length. Reactive matching technique is used to realize ultra wideband. Results show that the proposed power amplifier has more than 43 dBm output power with the associate power gain over 18 dB over the frequency band ranging from 7.5 to 12.5 GHz at 1ms pulse width and 10% duty cycle. The size of the power amplifier (PA) is 5.5×3.9 mm
²
.