Large-Signal Characterization of Power FinFETs Based on X-Parameter Model

The large-signal characteristics of power FinFETs based on the X-parameter model are presented. FinFET devices with various drain-extension structures were fabricated using a standard silicon FinFET process. The X-parameters were measured using a nonlinear vector network analyzer at 2.4 GHz. The output powers at fundamental and harmonic frequencies derived from X-parameters are compared between different device structures to determine the suitable design method for RF power applications. The large-signal behavior of devices is explained by the X-parameters related to output powers and output impedances.