High Efficient Design of K-Band GaN Power Amplifier with bias optimization for high linearity

In this paper, GaN (gallium nitride) power amplifier for K-band satellite communication is presented. The power amplifier has 3-stage and is designed for 17.7 to 21GHz. In the design, the output matching circuit is optimized to enhance the efficiency at desired frequency, and gate bias condition is also optimized for high linearity. This amplifier shows output power of 4W and PAE (power added efficiency) of 30% with CW (continuous wave) signal. In noise to power ratio (NPR) measurement, NPR of 15dBc with PAE of 26% is achieved.