A 0.1 THz SiGe LNA with Novel Feedback Networks for Bandwidth Extension

Maintaining good gain flatness performance in a large bandwidth continues to limit the design of low noise amplifier (LNA) operating approaching 0.1 THz. To overcome the challenge, a novel feedback method for wideband LNA with improved bandwidth extension is proposed. For verification, an F-band LNA based on the novel feedback is designed in a 0.13- μm SiGe BiCMOS technology with nominal f
_T
of 200 GHz. Without increasing power consumption and die size, the LNA realizes a flat gain of 13.1+0.5 dB from 90 to 115 GHz with the 3-dB bandwidth of 35 GHz. Consuming 44.8 mW dc power from a 3-V supply, the LNA exhibits a minimum noise figure of 9.1 dB, and an output P
_1-dB
of -4.9 dBm at 100 GHz.