An Improved Surface Potential-Based High-Order Channel Length Modulation Model

In this paper, an improved surface-potential-based model is developed. The relationship between gate voltage and surface potential are derived by solving the surface potential equation (SPE). Based on the conventional channel length modulation theory, a modified bias-related high-order channel length modulation coefficient is proposed. The model considers the difference in different channel lengths and the effects of gate voltage on effective channel length, improving the accuracy of the channel length modulation. The sub-threshold region channel current modulation factor is introduced. It improved the weak current characteristics of the subthreshold region effectively. The improved model has been validated for different sizes of transistors fabricated in TSMC 65nm CMOS process. The root-mean-square-error of I-V characters were improved from 0.6083 to 0.2135 in all regions. And in the sub-threshold region, RMSE was improved from 1.068×10
^-4
to 3.702×10
^-5
.