A 2-6 GHz Power Amplifier with 45% PAE in $0.25\mu \mathrm{m}$ GaN Technology

This paper presents a two-stage 2-6 GHz high efficiency power amplifier designed by 0.25 μm GaN HEMT technology. A low loss output match network (OMN) is used to realize high Q matching thus improve the efficiency. A multilevel inter-stage match network (ISMN) with gain compensation structure is used to improve the bandwidth. Results show that the designed GaN power amplifier can provide over 45% PAE and 35 dBm output power in the frequency band ranging from 2-6 GHz under continuous wave (CW) mode. The size of the chip is 2.2mm*1.6mn.