RF characterization of mold compound materials and high-$Q$ integrated passives using fan-out wafer-level packaging technology

This paper focusses on the characterization of the RF properties of different mold compound materials based on measured S-parameters of test structures up to 67 GHz. The measurements are complemented by a calibrated model based on electromagnetic simulations. This approach allows for a complete analysis of the RF properties of mold compounds and the impact of different material parameters and geometries. Using mold compounds with excellent RF properties, high-Q passives have been realized using fan-out wafer-level packaging technology.