Contents I. Introduction
As it is known [1]-[3], semiconductor metal oxides show their electrophysical and luminescent properties in a best way at their deviations from stoichiometry and due to defects in crystalline structure, in particular, embedded cations and anionic Schottky defects. Due to these properties, tin dioxide, especially in the nanosized form, is almost indispensable material for detecting gas media. This material is commonly used in gas resistive type gauges [4]-[5]. However, recently discovered features of photoluminescence of nanosized forms of tin dioxide [6]-[7] have allowed to extend its application to photoluminescent active sensor elements [8]. Dispersion up to nanometer sizes in a best way contributes to both deviation from stoichiometry and to the formation of these defects. This, above all, is due to the deployment of a surface in an ensemble of nanoparticles. However, there is a problem of keeping the stability of radiation, since the large active surface of nanoparticles due to its defectness can become a source of non-radiation recombination, which will reduce the quantum yield of luminescence. In addition, it is desirable to isolate individual nanoparticles in order to prevent their further aggregation, since, as it is well-known [9], the photoluminescence of large aggregation is negligible. Consequently, fixation of nanosized formations of a tin dioxide in a favorable matrix becomes appropriate.
