A 30-V Floating Level Shifter with Sub-700-ps Delay and Sub-300-ps Edge Time for GaN Driver

In this paper, a high-voltage high-speed floating voltage level shifter with sub-nanosecond delay used for half-bridge GaN driver is proposed. The proposed level shifter is based on the cross-coupled structure. By eliminating a high-impedance node and introducing a pull-up module, the voltage transition can be sped up. The proposed level shifter is designed in 0.18-μm CMOS technology, and the simulation results show it can work with maximum 30-V supply voltage. A conduction delay of 681.4 ps and a turn-off delay of 519.9 ps are achieved respectively. The rising and falling time are 295 ps and 178 ps, respectively.