24GHz Zero-Bias Asymmetrical Spacer Layer Tunnel Diode Detectors

This work reports on a novel temperature-insensitive zero-bias GaAs/AlAs Asymmetric Spacer Layer Tunnel diode (ASPAT) detector with a curvature coefficient is 18V
^-1
. The detector was fabricated and experimentally measured in the frequency band (15 to 35) GHz at various input powers. The maximum measured sensitivity is 1300 V/W at 24GHz for a -27dBm incident RF power. The minimum calculated noise equivalent power is ~ 20pW/√{Hz}. The detector shows good performances, comparable to reported detectors based on Schottky or backward diodes. The results reported here validate the physical model developed which can be used to design and fabricate low cost, low power, temperature insensitive high-frequency tunnel diode detector for a range of applications.