Technological Features of Graphene-based RF NEMS Capacitive Switches on a Semi-insulating Substrate

This paper concerns various technological specificity design and manufacturing of radiofrequency graphene-based nanoelectromechanical (GNEMS) switches on a semi-insulating substrate (e.g., GaN or GaAs). GNEMS switches are considered as a prospective solution to improve and miniaturize microwave devices and analog integrated circuits, and to raise their operating frequency limit. In the current research, GNEMS switch technology aspects are considered taking into account modern simulation, design, and fabrication features. Key results of this research include a description of the proposed GNEMS switch structure on GaN and GaAs substrates, the fabrication and test process. A difference between the properties of synthesized and embedded graphene is noted. The microwave performance was evaluated using full-wave numerical simulation in ANSYS HFSS, and the obtained scattering parameters are displayed. All these steps are required to employ GNEMS switches in prospective integrated circuits.