Compact Model of the Entire I-V Characteristic for Accurate Description of the Asymmetric Degradation of pMOSFETs during Off-State Stress

We propose a compact model description of the entire I
_d
-V
_g
characteristic, based on the EKV model, and extended to capture the complex I
_d
-V
_g
distortion induced by asymmetric hot carrier degradation. In particular, we apply the methodology to model the degradation of pMOS devices during off-state hot carrier stress, which is a reliability concern relevant for memory periphery applications.