High-Power Pulsed Evaluation of High-Voltage SiC N-GTO

This research is focused on the characterization and pulse evaluation of high voltage silicon carbide (SiC) n-type (n-doped drift region) gate turn-off thyristors (GTOs). The SiC GTO is a promising device that is currently being pursued by the Army as a replacement for current silicon-based, high-power pulse switches for power-dense, vehicle mounted pulsed power systems. The devices were are 15 kV, 1.0 cm
²
n-GTOs, fabricated by Wolfspeed, a Cree Company for the U.S. Combat Capabilities Development Command Army Research Laboratory. The SiC n-GTOs were pulsed at a 1-ms wide half-sine shaped current pulse to assess peak pulse current capability, on-state voltage drop, high action (1
²
t) capability, and peak power dissipation limitations.