A New Junction Barrier Schottky Diode Using a Novel Lateral Architecture on a 4H-SiC Substrate

For the first time, a high voltage, high current, 4H-SiC lateral Junction Barrier Schottky (JBS) diode has been demonstrated. The proposed lateral diode is featured by a REduced SURface Field (RESURF) structure as well as an interdigitated multi-finger design. As a result, the proposed 4H-SiC JBS diode achieved a breakdown voltage of 380V and a current rating of 15A at an anode voltage of 1.75V (dynamic on-resistance, 2.15 m Ω -cm
²
), which is the record performance from 4H-SiC JBS diodes in the lateral architecture. Fabrication and development of these record lateral SiC diodes are crucial to the advancement of SiC in low voltage and Power Integrated Circuit (PIC) applications.