Physics Based TCAD Simulation and Calibration of GaN/AlGaN/GaN HEMT Device

This study is intended to establish physics-based TCAD (Technology Computer Aided Design) simulation methodology for Normally On GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device performance verification. Calibration work is based on literature review and GaN wafer experimental data. Not only fixed charge and donor like traps concentration but also barrier height, tunneling coefficient and energy level for traps also plays vital role in the calibration process as discussed in the paper.