Unleashing the potential of α-Ga2O3

Corundum-structured Ga2O3 (α-Ga2O3) is a new candidate for the next generation power device materials due to its excellent physical properties. By using our propriately MIST EPITAXY® technology, thin film SBDs with extremely low specific on-resistance of 0.1 mΩ.cm2 (breakdown voltage 531 V) were successfully demonstrated. 600 V class SBDs packaged in TO-220 for consumer application have been developed and practical use is almost there. In addition, the world's first normally-off α-Ga2O3 MOSFET was also demonstrated.