A Novel Diode-Clamped Carrier-Stored SOI Lateral Superjunction IGBT with Ultralow Turn-off Loss and Saturation Current

A novel diode-clamped carrier-stored SOI lateral superjunction IGBT is proposed and investigated by numerical simulations. The propose LIGBT remarkably features a carrier stored layer (n-CS) beneath the p-base region, an superjunction (SJ) layer in the drift region, a p-shield region connected to the cathode electrode through two integrated series diodes via floating ohmic contact (FOC) and a trench oxide embedded between the p+ and n+ anode. The heavily doping n-CS layer can effectively reduce the on-state voltage ( VON), and the p-shield region eliminates the impact on the breakdown voltage (BV) from the high doping of the n-CS (Ncs). In addition, the connection between the integrated series diodes and the p-shield region can help to achieve a quite low saturation current. Finally, the proposed CSTBT can realized an ultralow Eoff thanks to the rapid extraction of the excess carriers by the SJ layer. The simulation results indicate that, at the same VON, Eoff of the proposed LTIGBT is 90% and 97% lower than those of the conventional LIGBT (LIGBT-1) and the separated shorted-anode LIGBT (LIGBT-2), respectively.